052-6400 rev a 3-2012 APT40GR120B_s symbol parameter ratings unit v ces collector emitter voltage 1200 v v ge gate-emitter voltage 30 i c1 continuous collector current @ t c = 25c 88 a i c2 continuous collector current @ t c = 100c 40 i cm pulsed collector current 1 160 scwt short circuit withstand time: v ce = 600v, v ge = 15v, t c =125c 10 s p d total power dissipation @ t c = 25c 500 w t j ,t stg operating and storage junction temperature range -55 to 150 c t l max. lead temp. for soldering: 0.063" from case for 10 sec. 300 maximum ratings all ratings: t c = 25c unless otherwise speci ? ed. static electrical characteristics APT40GR120B apt40gr120s 1200v, 40a, v ce(on) = 2.5v typical . microsemi website - http://www.microsemi.com caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. symbol parameter min typ max unit v (br)ces collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) 1200 volts v ge(th) gate threshold voltage (v ce = v ge , i c = 2.0ma, t j = 25c) 3 4.5 6.0 v ce(on) collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 25c) 2.5 3.2 collector-emitter on voltage (v ge = 15v, i c = 40a, t j = 125c) 3.5 collector-emitter on voltage (v ge = 15v, i c = 88a, t j = 25c) 3.2 i ces collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 10 1000 a collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 100 i ges gate-emitter leakage current (v ge = 20v) 250 na ultra fast npt - igbt ? the ultra fast npt - igbt ? is a new generation of high voltage power igbts. using non-punch-through technology, the ultra fast npt-igbt ? offers superior ruggedness and ultrafast switching speed. features low saturation voltage low tail current rohs compliant short circuit withstand rated high frequency switching to 50khz ultra low leakage current unless stated otherwise, microsemi discrete igbts contain a single igbt die. this device is recommended for applications such as induction heating (ih), motor control, general purpose inverters and uninterruptible power supplies (ups). t o - 2 4 7 g c e d 3 pa k g c e (s) (b) downloaded from: http:///
APT40GR120B_s 052-6400 rev a 3-2012 thermal and mechanical characteristics dynamic characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance .25 c/w r ja junction to ambient thermal resistance 40 w t package weight .22 oz 6.2 g torque mounting torque (to-247 package), 4-40 or m3 screw 10 in-lbf 6.2 n ? m 1 repetitive rating: pulse width and case temperature limited by maximum junction temperature. 2 pulse test: pulse width < 380 s , duty cycle < 2%. 3 see mil-std-750 method 3471.4 r g is external gate resistance, not including internal gate resistance or gate driver impedance. (mic4452) 5 e on2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the igbt turn on energy loss. a combi device is used for the clamping diode.6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. microsemi reserves the right to change, without notice, the speci? cations and information contained herein. symbol parameter test conditions min typ max unit c ies input capacitance capacitance v ge = 0v, v ce = 25v f = 1mhz 3980 pf c oes output capacitance 320 c res reverse transfer capacitance 80 v gep gate to emitter plateau voltage gate charge v ge = 15v v ce = 600v i c = 40a 7v q g 3 total gate charge 210 nc q ge gate-emitter charge 25 q gc gate- collector charge 90 t d(on) turn-on delay time inductive switching (25c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 4 t j = +25c 22 ns t r current rise time 25 t d(off) turn-off delay time 163 t f current fall time 40 e on2 5 turn-on switching energy 1375 3000 j e off 6 turn-off switching energy 906 1650 t d(on turn-on delay time inductive switching (125c) v cc = 600v v ge = 15v i c = 40a r g = 4.3 4 t j = +125c 22 ns t r current rise time 25 t d(off) turn-off delay time 185 t f current fall time 47 e on2 5 turn-on switching energy 1916 3500 j e off 6 turn-off switching energy 1186 2500 downloaded from: http:///
052-6400 rev a 3-2012 APT40GR120B_s typical performance curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -50 -25 0 25 50 75 100 125 0 2 4 6 8 10 12 14 16 18 0 100 200 300 0 1 2 3 4 5 6 6 8 10 12 14 16 0 50 100 150 200 250 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 0 4 8 12 16 20 24 28 32 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 6 250 s pulse test<0.5 % duty cycle t j = 25c. 250 s pulse test <0.5 % duty cycle v ge = 15v. 250 s pulse test <0.5 % duty cycle i c = 20a i c = 40a i c = 80a i c = 40a i c = 80a 10v 15v i c = 40a t j = 25c v ce = 960v v ce = 600v v ce = 240v t j = 25c t j = -55c v ge = 15v t j = - 55c t j = 150c v ce , collector-to-emitter voltage (v) figure 1, output characteristics (t j = 25c) i c , collector current (a) t j = 25c t j = 125c v ce , collector-to-emitter voltage (v) figure 2, output characteristics (t j = 25c) i c , collector current (a) t j = 125c v ge , gate-to-emitter voltage (v) figure 4, transfer characteristics i c , collector current (a) v ge , gate-to-emitter voltage (v) figure 5, on state voltage vs gate-to-emitter voltage v ce , collector-to-emitter voltage (v) gate charge (nc) figure 8, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 3, on state voltage vs junction temperature v ce , collector-to-emitter voltage (v) t c , case temperature (c) figure 7, dc collector current vs case temperature i c , dc collector current (a) 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -.50 -.25 0 25 50 75 100 125 150 t j , junction temperature figure 6, threshold voltage vs junction temperature v gs(th) , threshold voltage (normalized) 6v 7v i c = 20a 8v 9v 13v downloaded from: http:///
APT40GR120B_s 052-6400 rev a 3-2012 typical performance curves 1 10 100 20 30 40 50 60 70 80 10 100 1000 10 20 30 40 50 60 70 80 90 100 1000 10000 0 25 50 75 100 125 700 1000 5000 0 10 20 30 40 50 100 1000 10000 10 20 30 40 50 60 70 80 v ce = 600v, v ge =15v, r g = 4.3 t j = 25c or 125c t d(on) i ce , collector-to-emitter current (a) figure 11, turn-on time vs collector current switching time (ns) i ce , collector-to-emitter current (a) figure 12, turn-off time vs collector current switching time (ns) r g , gate resistance ( ) figure 14, energy loss vs gate resistance i ce , collector-to-emitter current (a) figure 13, energy loss vs collector current switching energy loss ( j) t j , junction temperature (c) figure 15, energy losses vs junction temperature switching energy losses ( j) t r t d(off) t f v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c v ce = 600v, v ge =15v, r g = 4.3 t j = 25c t j = 125c e on2 e off e on2 e off v ce = 600v, v ge =15v, i c = 40a t j = 125c switching energy loss ( j) e off e on2 v ce = 600v, v ge =15v, r g = 4.3 i c = 40a 1.0e ? 11 1.0e ? 10 1.0e ? 9 1.0e ? 8 0 10 20 30 40 50 c oes c res c ies v ce , collector-to-emitter voltage (volts) figure 9, capacitance vs collector-to-emitter voltage c, capacitance (pf) 0.1 1 10 100 300 1 10 100 1000 2000 v ce , collector-to-emitter voltage figure 16, minimum switching safe operating area i c , collector current (a) apt30dq120 i c a d.u.t. v ce v cc figure 10, inductive switching test circuit 1ms 100ms 100 s 10ms downloaded from: http:///
052-6400 rev a 3-2012 APT40GR120B_s typical performance curves 0 0.05 0.10 0.15 0.20 0.25 0.30 10 -4 10 -3 10 -2 0.1 1 10 z jc , thermal impedance (c/w) 0.3 d = 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 17, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.5 0.1 0.05 peak t j = p dm x z jc +t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. 15.95 (.628)16.05(.632) 1.22 (.048)1.32 (.052) 5.45 (.215) bsc {2 plcs. } 4.98 (.196)5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105)2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150)4.06 (.160) (base of lead ) collector(heat sink) 1.98 (.078)2.08 (.082) gate collector emitter 0.020 (.001)0.178 (.007) 1.27 (.050)1.40 (.055) 11.51 (.453)11.61 (.457) 13.41 (.528)13.51(.532) revised8/29/97 1.04 (.041)1.15(.045) 13.79 (.543)13.99(.551) revised 4/18/95 e3 sac: 100% sn plating to-247 package outline d 3 pak package outline e3 sac: 100% sn plating downloaded from: http:///
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